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october 2015 docid026927 rev 2 1 / 12 this is information on a product in full production. www.st.com STW48N60DM2 n - channel 600 v, 0.065 typ., 40 a mdmesh? dm2 power mosfet in a to - 247 package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max. i d STW48N60DM2 600 v 0.079 40 a ? fast - recovery body diode ? extremely low gate charge and input capacitance ? low on - resistance ? 100% avalanche tested ? extremely high dv/dt ruggedness ? zener - protected applications ? switching applica tions description this high voltage n - channel power mosfet is part of the mdmesh? dm2 fast recovery diode series. it offers very low recovery charge (q rr ) and time (t rr ) combined with low r ds(on) , rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and zvs phase - shift converters. table 1: devic e summary order code marking package packing STW48N60DM2 48n60dm2 to - 247 tube t o-247 1 2 3
contents STW48N60DM2 2 / 12 docid026927 rev 2 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteri stics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 8 4 package information ................................ ................................ ....... 9 4.1 to - 247 package information ................................ ............................. 9 5 revision history ................................ ................................ ............ 11
STW48N60DM2 electrical ratings docid026927 rev 2 3 / 12 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 25 v i d drain current (continuous) at t case = 25 c 40 a drain current (continuous) at t case = 100 c 25 i dm (1) drain current (pulsed) 160 a p tot total dissipation at t case = 25 c 300 w dv/dt (2) peak diode recovery voltage slope 50 v/ns dv/dt (3) mosfet dv/dt ruggedness t stg storage temperature - 55 to 150 c t j operating junction temperature notes: (1) pulse width is limited by safe operating area. (2) i sd 40 a, di/dt=900 a/s; v ds peak < v (br)dss , v dd = 400 v. (3) v ds 480 v. table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case 0.42 c/w r thj - amb thermal resistance junction - ambient 50 table 4: avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 7 a e ar single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 950 mj
electrical characteristics STW48N60DM2 4 / 12 docid026927 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5: static symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 1 ma 600 v i dss zero gate voltage drain current v gs = 0 v, v ds = 600 v 1 a v gs = 0 v, v ds = 600 v, t case = 125 c 100 i gss gate - body leakage current v ds = 0 v, v gs = 25 v 5 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 20 a 0.065 0.079 table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, i d = 0 a - 3250 - pf c oss output capacitance - 142 - c rss reverse transfer capacitance - 4.5 - c oss eq. (1) equivalent output capacitance v ds = 0 to 480 v, v gs = 0 v - 258 - pf r g intrinsic gate resistance f = 1 mhz, i d = 0 a - 4 - q g total gate charge v dd = 480 v, i d = 40 a, v gs = 10 v (see figure 14: "test circuit for gate charge behavior" ) - 70 - nc q gs gate - source charge - 18 - q gd gate - drain charge - 28 - notes: (1) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 300 v, i d = 20 a r g = 4.7 , v gs = 10 v (see figure 13: "test circuit for resistive load switching times" and ) - 27 - ns t r rise time - 27 - t d(off) turn - off delay time - 131 - t f fall time - 9.8 -
STW48N60DM2 electrical characteristics docid026927 rev 2 5 / 12 table 8: source - drain diode symbol parameter test conditions min. typ. max. unit i sd (1) source - drain current - 40 a i sdm (2) source - drain current (pulsed) - 160 a v sd (3) forward on voltage v gs = 0 v, i sd = 40 a - 1.6 v t rr reverse recovery time i sd = 40 a, di/dt = 100 a/s, v dd = 60 v (see figure 15: "test circuit for inductive load switching and diode recovery times" ) - 140 ns q rr reverse recovery charge - 0.7 c i rrm reverse recovery current - 10 a t rr reverse recovery time i sd = 40 a, di/dt = 100 a/s, v dd = 60 v, t j = 150 c (see figure 15: "test circuit for inductive load switching and diode recovery times" ) - 256 ns q rr reverse recovery charge - 2.5 c i rrm reverse recovery current - 20 a notes: (1) limited by maximum junction temperature (2) pulse width is limited by safe operating area. (3) pulse test: pulse duration = 300 s, duty cycle 1.5%. table 9: gate - source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate - source breakdown voltage i gs = 250 a, i d = 0 a 30 - - v the built - in back - to - back zener diodes are specifically designed to enhance the esd performance of the device. the zener voltage facilitates efficient and cost - effective device integrity protection,thus eliminating the need for additional external componentry.
electrical characteristics STW48N60DM2 6 / 12 docid026927 rev 2 2.2 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance
STW48N60DM2 electrical characteristics docid026927 rev 2 7 / 12 figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normalized on - resistance vs temperature figure 11 : normalized v(br)dss vs temperature figure 12 : source - drain diode forward characteristics
test circuits STW48N60DM2 8 / 12 docid026927 rev 2 3 test circuits figure 13 : test circuit for resistive load switching times figure 14 : test circuit for gate charge behavior figure 15 : test circuit for inductive load switching and diode recovery times figure 16 : unclamped inductive load test circuit figure 17 : unclamped inductive waveform figur e 18 : switching time waveform
STW48N60DM2 package information docid026927 rev 2 9 / 12 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 to - 247 package information figure 19 : to - 247 package outline
package information STW48N60DM2 10 / 12 docid026927 rev 2 table 10: to - 247 package mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ?p 3.55 3.65 ?r 4.50 5.50 s 5.30 5.50 5.70
STW48N60DM2 revision history docid026927 rev 2 11 / 12 5 revision history table 11: document revision history date revisi on changes 21 - oct - 2014 1 first release. 29 - oct - 2015 2 document status promoted from preliminary to production data. modified: title modified: v ds in cover page modified: peak diode recovery voltage slope parameter value and note 2 modified: r thj - case value in table 3: "thermal data" modified: the entire values in table 4: "avalanche characteristics" modified: i dss , i gss max values and r ds(on) typical value in table 5: "static" modified: the entire values in table 6: "dynamic" , table 7: "switching times" and table 8: "source - drain diode" added: table 9: "gate - source zener diode" added: section 2.1: "electrical characteristics (curves)" minor text changes
STW48N60DM2 12 / 12 docid026927 rev 2 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers s hould obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, select ion, and use of st products and st assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics C all rights reserved

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